Abstract
Presents results from measurements of static coefficient of friction between materials of interest to microelectromechanical systems (MEMS). The materials studied include silicon, silicon dioxide, and silicon nitride. Two measurement techniques have been used to this study. In the first technique, static friction between two millimeter-sized flat components was measured in a 10-6 Torr vacuum chamber. In the second technique, static friction between a three-millimeter radius aluminum bullet coated with a material of interest and a flat substrate was measured in a approximately 5*10-10 Torr ultra-high vacuum (UHV) chamber. The results show that the coefficient of friction, mu , between silicon and silicon compound contacts in vacuum is in the range 0.2 to 0.7. The coefficients of friction between silicon dioxide/silicon dioxide and silicon dioxide/silicon contacts increase by 55% to 157% with increased exposure to humidity. Additionally, friction between similar materials behaves differently than that between dissimilar materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.