Abstract
Graphene Nano ribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene Nano ribbons, from both basic science and application points of view, is their electrical band gap. In this research, we study the tunability of band gap in single and double layer Graphene nano ribbons (GNRs) of specified widths and edge geometries. The calculations are carried out using Tight Binding quantum mechanical simulations for obtaining the optimized atomic configurations of the nanoribbons and their electronic structures. Our calculations show that for single-layer graphene nanoribbon with a width of 12A0, the one with armchair edge is semiconducting with a band gap of 0.25 eV whereas the one with zigzag edge is metallic. For bilayer nanoribbons, two different stacking configurations (AA and AB) are considered.
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