Abstract
Zirconium Lα radiation has been utilized to investigate the chemical bonding in silicon compounds by x-ray photoelectron spectroscopy. The compounds studied in the present investigation are SiO2, SiO, SiC, Si3N4, and silicon-oxynitrides. The spectra in the Si 1s and KLL Auger regions were recorded for these compounds and compared with the elemental spectra. In order to estimate the change in chemical environment of Si in these compounds, the Auger parameter was determined in each case as the difference between the binding energies for the 1s and the KLL peaks. The trend in the value of the Auger parameter is correlated with the degree of atomic relaxation due to the increasing neutralization of charge around the Si cations in these compounds. A good agreement was found between the change in the Auger parameter and the bond ionicity calculated for the Si cation in these compounds. Using this plot, the bond ionicities were determined for the oxynitrides. A model is also developed to estimate these ionicities from the concentrations of oxygen and nitrogen present in these compounds. The values of the ionicities obtained by these two different methods give a satisfactory agreement. We have shown that the plot between the change in the Auger parameter and the bond ionicity could be used to estimate the bond ionicities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.