Abstract
No rude approximations were made in the course of deducing formula for B(χ, Eg) as a function of parameters of secondary electron emission SEE; where B(χ, Eg) is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of semiconductors and insulators SI with width of forbidden band Eg and original electron affinity χ. It can be concluded that the formula for B(χ, Eg) as a function of parameters of SEE can be used to calculate B(χ, Eg). The B(χ, Eg) calculated with the formula for B(χ, Eg) as a function of parameters of SEE and characteristics of B(χ, Eg) and SEE from SI were studied, the formula for B(χ, Eg) of SI with Eg≥0.6 eV and χ≥0.5 eV as a function of χ and Eg was determined. It concludes that the determined formula can be used to calculate B(χ, Eg) of SI with Eg≥0.6 eV and χ≥0.5 eV. The processes and characteristics of SEE from SI, energy loss of primary electron and parameters of SEE were studied, the formulae for δm(Epom, χreal, Eg) in the general case and 1/α(χreal, Eg) of SI with Eg≥0.6 eV and χ≥0.5 eV were deduced and experimentally proved, respectively; where δm(Epom, χreal, Eg) is the maximum secondary electron yield δm of SI with Eg and χreal, Epom is primary incident energy corresponding to δm, χreal is real electron affinity,1/α(χreal, Eg) is mean escape depth of secondary electrons emitted from SI with Eg and χreal.
Highlights
With the development of space research, scanning electron microscopy and electronic information technology, secondary electron emission (SEE) from semiconductors and insulators SI is applied in more and more fields.[1,2] So there has been much work on the SEE characteristics of SI.[3,4,5,6,7,8,9] due to the complexity of SEE characteristics of SI, it is very difficult for us to understand them
The research of parameters of SEE from SI10–14 such as B( χ, Eg)[11,12] and 1/α( χreal, Eg)[7,13,14] are common methods to characterize SEE characteristics; where B( χ, Eg) is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of SI with width of forbidden band Eg and original electron affinity χ, 1/α( χreal, Eg) is mean escape depth of secondary electrons emitted from SI with Eg and real electron affinity χreal
It can be concluded that the assumption that the Eq (25) is suitable to SI with Eg≥0.6 eV and χ≥0.5 eV is correct
Summary
With the development of space research, scanning electron microscopy and electronic information technology, secondary electron emission (SEE) from semiconductors and insulators SI is applied in more and more fields.[1,2] So there has been much work on the SEE characteristics of SI.[3,4,5,6,7,8,9] due to the complexity of SEE characteristics of SI, it is very difficult for us to understand them. Formula for B( χ, Eg) or presenting new method of calculating B( χ, Eg) without rude approximations are important and necessary. Measuring 1/α( χreal, Eg) is difficult and available experimental 1/α( χreal, Eg) are scarce.[16] Instead, several authors deduced formulae for 1/α( χreal, Eg).[13,14] But there is not good agreement between 1/α( χreal, Eg) calculated with the deduced formulae for 1/α( χreal, Eg) and experimental ones.[13,14]. No rude approximations were made in the course of deducing formula for B( χ, Eg) as a function of parameters of SEE in this study. There is good agreement between 1/α( χreal, Eg) calculated with the formula for 1/α( χreal, Eg) of SI with Eg≥0.6 eV and χ≥0.5 eV and experimental ones
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