Mean escape depth of secondary electrons emitted from semiconductors and insulators

Abstract

Based on dominant physical processes and characteristics of secondary electron emission, formula for maximum yield was deduced. On the basis of relation among secondary electron escape probability, maximum yield from semiconductors and insulators, primary energy of maximum yield and average energy required to produce a secondary electron, mean escape depth of secondary electrons emitted from semiconductors and insulators as a function of atomic number, average atomic number, back-scattering coefficient, material density, atomic weight and primary energy of maximum yield were deduced. Calculated mean escape depth of secondary electrons were compared with the values measured experimentally and the scattering of mean escape depth of secondary electrons from same material was analyzed. It was concluded that the formulae presented were found to be universal for the mean escape depth of secondary electrons emitted from semiconductors and insulators.