Abstract
Cl2, HCl, and HBr added BCl3-based inductively coupled plasmas were used to etch (0001) sapphire wafers and their etch characteristics were investigated. The plasma characteristics were monitored in-situ by optical emission spectroscopy and a Langmuir probe. A photoresist was used as the etch mask and an etch selectivity greater than 1 with the etch rate of 3800 Å/min could be obtained with 20%HCl/80%BCl3. The most anisotropic etch profile could be observed in 10%HBr/90%BCl3.
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