A study of regrowth interface and material quality for a novel InP-based architecture

Abstract

This work examines a new technology, coupling the use of a quantum-well-intermixing processing platform and an offset quantum-well regrowth. Achieving a high material quality regrowth on a surface subjected to heavy processing and defect diffusion during the intermixing process is vital to the performance of the offset quantum wells. Using photoluminescence, atomic force microscopy, and fabricating broad area lasers, we demonstrate for the first time that good material quality can be achieved when regrowing on surfaces with intermixed material beneath. Further, we achieve regions of high and low optical confinement on the same chip.