Abstract
The reactive ion etching (RIE) of a film results in the formation of deep levels in silicon. The effect has been studied by deep level transient spectroscopy (DLTS), using Au/n‐Si Schottky diodes. An electron trap level is created at around . The ion energy dependence of the trap levels is investigated. The I‐V and C‐V characteristics of RIE etched devices are compared with those of control samples prepared by a standard wet etching process.
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