Abstract

This article proposes a lithography-free technique to fabricate Au NPs on glass substrates using multiple solid-state dewetting (SSD) of sputtered Au ultra-thin films for LSPR sensor chip applications. We studied the influence of initial film thickness and the number of repeated process cycles on the morphology and LSPR sensing performance. This fabrication process allowed control over particle size, gap spacing, and density of the Au NPs, which influenced the LSPR peak position as observed using field emission scanning electron microscopy (FE-SEM) and UV–Vis–NIR spectrophotometry. To demonstrate LSPR sensing performance, the refractive index (RI) sensitivity was evaluated by measuring the wavelength shift of the LSPR peak in a series of glycerol/phosphate-buffered saline (PBS) mixtures, varying the refractive index from 1.33909 to 1.37409. The results showed that RI sensitivity and the figure of merit (FOM) for all prepared samples ranged from 37.191 ± 12.26–73.592 ± 9.70 and 0.35 ± 0.12–0.75 ± 0.02, respectively. An increase in repeated process cycles tended to decrease RI sensitivity and FOM. The best LSPR performance was achieved with an 8 nm initial film thickness after the first cycle, with an RI sensitivity of 70.937 ± 2.60 and an FOM of 0.75 ± 0.02, attributed to optimal Au size and density. Additionally, the binding efficiency response to human IgG with high regeneration cycles was demonstrated, highlighting the potential for biosensor applications.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.