A study of MOSFET Device for The characterization of ID-VG and ID-VD Curves

Abstract

In this paper, the MOSFET device structure has been simulated using an open-source simulator and the characterization of the ID-VG and ID-VD curves has been studied. The n-channel MOSFET device structure for three distinct generations has been simulated using the provided parameters, getting the corresponding I-V curves and observing their surface charge - Vg properties using the online simulator Nanohub. Based on the reported electrical characteristics, we may deduce that the Vth values decrease when the MOSFET device is scaled down. The current Id when Vg is zero is substantially higher in the third generation of the device than in the first and second generations, indicating that there is greater leakage current. Consequently, this is the punch through effect because current flows regardless of the gate voltage (i.e. even gate voltage is zero). Therefore, the device's third generation is poorly developed. In terms of performance, we can infer that the first iteration of the design is superior than the second and third generations. Therefore, substrate doping may be enhanced further for the second and third generation, while oxide thickness can be lowered further for improved performance. As the concentration of doping increases, however, we must additionally consider the influence of ionization.