CNTFET: The emerging post-CMOS device

Abstract

This Paper presents the comparison of MOSFET and CNTFET devices. Many problems are associated with conventional MOSFET in nanometer regime. In this paper we have analyzed and justify why CNTFET is to be a post-CMOS device. For that we have analyzed the quantum capacitance and found that in CNTFET device it decreases with decrease in oxide thickness whereas in MOSFET device it increases, which leads to performance degradation of the device. After that we have observed from the HSPICE simulation that beyond 10 nm channel length the threshold voltage of MOSFET device is reduces rapidly whereas in CNTFE device it increases sharply which leads to reduce leakage power.