Abstract
The atomic mixing behavior of AlAg, AlIn and AlSn systems induced by Ar ion irradiation has been studied at room temperature. Although the AlIn and AlSn systems are immiscible under normal thermodynamical conditions, the intermixing of elemental layers is revealed by Rutherford backscattering spectrometry using 1 MeV 4He and electron microscopic and diffraction studies. In the AlAg system, the intermediate Ag 2 Al phase is formed after the irradiation. The irradiation induced broadening of thin elementary markers of Ag, In and Sn imbedded in vacuum-deposited Al is monitored by finding the increase in the variance of the marker peak in the backscattering spectrum. The variance appears to increase linearly with dose at an early stage of irradiation in agreement with a prediction of the collisional mixing theory. The difference of mixing rate between the marker elements, however, suggests the important roles of chemical interaction and interatomic diffusion.
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