Abstract
The effects of dissolution characteristics and acid diffusion behavior on lithographic performance were evaluated in tert-butoxycarbonyl (t-BOC)-protected chemically amplified positive deep-ultraviolet (DUV) resists. The resists consisted of t-BOC-protected polyhydroxystyrene as a base resin and 2,4-dimethylbenzenesulfonic acid derivative as a photoacid generator (PAG). In particular, the line width difference between an isolated line and a dense line (iso/dense bias) was investigated by changing the post-exposure bake (PEB) temperature. As a result, clear relationships among dissolution characteristics, acid diffusion length, and iso/dense bias were obtained. Moreover, suitable dissolution characteristics and acid diffusion length for reducing iso/dense bias were clarified.
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