Abstract
Positron lifetime measurements have been performed in an investigation of nanostructured amorphous silicon nitride (NASN) for the first time. In NASN, the lifetimes τ1 τ2, and τ3 are attributed to vacancy-size free volume in the interface, microvoids at the intersections of interfaces and positronium formation in larger voids, respectively. Sintering treatment at high temperature can affect the behavior of these components greatly. Our experimental results can prove that the change of τ2 cannot be caused by the unpaired spins in dangling bonds, but by the change of interfacial microstructure. An attempt is made to elucidate how the interfacial microstructure affects the components. Besides the behavior of τ1 and τ3 is also analyzed. The behavior of the relative intensity I3 is related to the gas emission in the process of sintering.
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