Abstract
The paper describes an X-ray photoelectron spectroscopic study of the contaminant film on a single crystal Ge(100) surface after long exposure to the atmosphere and after low energy argon ion bombardment. An energy resolved method is demonstrated in the calculation of overlayer thickness with XPS measurements from the sample. The advantages of the energy resolved method are discussed in comparison to the generally more accepted method of angular resolved XPS for the measurement of thin film thicknesses. Ion bombardment is found not only to reduce the thickness of the overlayer, but also to change its character through chemical reduction of the oxide due to preferential sputtering of oxygen.
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