Abstract
The energy of the surface states of the InP (110) surface and their positions in the surface Brillouin zone were determined by scanning tunneling microscopy (STM). There surface point defects influencing the electronic structure of the surface were studied. A positively charged P vacancy and its diffusion on the surface was examined and its diffusion constant calculated. A charge transition from a positive to a neutral charge state of another point defect was found to be tip-induced and accompanied by a symmetry-lowering of the defect. An explanation in terms of the Jahn-Teller effect is proposed. Finally, a positively charged point defect caused band bending which had been measured in I–V characteristics. It is shown that this point defect is probably an antisite defect P In.
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