Abstract
An analytical model is proposed in order to explain the DC VDMOS transistor performance. It accounts for the device linear region, and the quasi-saturation effect is included in the formulation by considering the carrier velocity saturation at high electric field values. Electric field and majority-carrier distributions can be deduced from the model which agree with the results obtained from two-dimensional simulations. This formulation predicts a majority-carrier excess inside the epilayer even before the carrier velocity saturation is achieved. Interdigitated VDMOS transistors have been fabricated and two-dimensional simulations have been carried out in order to check the output characteristics against the proposed model. >
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