Abstract
A statistical method was proposed to extract multiple-cell upsets (MCUs) from single-event upsets (SEUs) without the physical-to-logical address mapping of the device under test (DUT). The method was first developed to extract the mapping relation between the least significant bits (LSBs) of the physical address and the logical address bits. Then, the mapping relation was utilized to extract MCUs from the SEUs. Using the proposed method, the proportion, size, and shape of the MCU can be obtained with high accuracy. To evaluate the proposed statistical method, the method was applied to SEU test data of a 0.18-μm static random-access memory (SRAM) irradiated by various heavy ions. The results demonstrated its effectiveness in MCU extraction.
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