Abstract
A stable 3-microm-wavelength, GaSb-based diode operated at room temperature has been investigated as a potential laser source for cryogenic target layering at the Omega Laser Facility for inertial confinement fusion (ICF) experiments. More than 50 mW of output power has been achieved at 14 degrees C with high spectral and output-power stability.
Highlights
Mid-IR, 3- to 3.5-μm laser sources are important for various applications including gas sensing, spectral analysis, infrared illumination, countermeasures, medical diagnostics, and others
One particular application is the layering of cryogenic targets for inertial confinement fusion (ICF) implosions at the Omega Laser Facility [1]
The development of a mid-IR, GaSb-based quantum well diode that produces >100 mW of output power at room temperature [4,5,6] presents a new choice for the layering laser source
Summary
Mid-IR, 3- to 3.5-μm laser sources are important for various applications including gas sensing, spectral analysis, infrared illumination, countermeasures, medical diagnostics, and others. Fuel material will sublime from the hotter regions and condense and refreeze on the thinner, colder regions, leading to a uniform distribution of fuel material (see Fig. 1) For this process to produce layers with the required uniformity, the temperature must be held very close to the material’s melting point. A mid-IR optical parametric oscillator (OPO) is used to layer the targets [3] Until recently, this was the only choice to achieve the required power of >100 mW in this wavelength range. The development of a mid-IR, GaSb-based quantum well diode that produces >100 mW of output power at room temperature [4,5,6] presents a new choice for the layering laser source. This article presents, for the first time, the spectral and output-power stability studies of a GaSb-based diode laser operated at room temperature
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