Abstract
The piezoelectric effect has been studied in ZnSe/ZnCdSe single quantum wells grown on (2 1 1)B GaAs substrates by molecular beam epitaxy. The effect of the internal electric field on the exciton spectra has been investigated using photocurrent and photoluminescence spectroscopy on Schottky structures where an external reverse bias can be applied. The strength of the piezoelectric field has been determined from the flat band condition in each quantum well.
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