Abstract
A radiation damage-resistant gamma-dose-rate meter in the form of an N/ P-type silicon solar cell was investigated as a solid-state analogue of a gaseous ionization chamber. The ionization current was found to be a linear function of exposure rate in the range of 10 2 ∾ 10 6 R/hr. The sensitivity of the Cu-doped cell, with a bulk resistivity of 200 Ω-cm, is the most stable, and the sensitivity degradation rate is only about 0·1 per cent per 10 6 R. The sensitivity can also be stabilized to some degree by pre-irradiation. The temperature dependence in various cells was found to be less than 0·4 per cent/°C between 5° ∾ 60°C. The non-directional dependence of the dosimeter probe was established to an accuracy of about ±1 per cent.
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