Abstract
We report a new electron beam lithography process using the cathodoluminescenceproperties of semiconductors to visualize nanostructures buried underneath the resist andto subsequently write the pattern associated with these nanostructures. This single-stepprocess could be used, for example, to make electrical contacts to nanowires (asillustrated in this work) or to design a photonic crystal resonator centered on asingle quantum dot. Fabrication speed and positioning accuracy are significantlyincreased as compared to the standard process since no alignment marks andthe mapping step of the nanostructures with respect to these marks are needed.We show also that low temperature (down to 5 K) could be used to improve theobservation of the nanostructures through the resist while keeping very good spatialresolution.
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