A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

Abstract

A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect. In order to improve the anti-radiation ability of the PLL microsystems used in the aerospace environment, a new voltage-controlled oscillator hardened circuit is proposed in this work. The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. The simulation results based on the SMIC 130 nm complementary metal–oxide–semiconductor (CMOS) process show that the maximum phase shift difference of the PLL with the hardened VCO is reduced by 53.5%, which shows that the hardened VCO structure can reduce the sensitivity of the PLL to the SET and improve the reliability of the PLL in the radiation environment.