Abstract

With the miniaturization of transistor size, fabrication of transistor with lithography technique is a foreseen problem. It is possible to routinely create semiconductor nanocrystals whose dimensions are much smaller than those can be realized by lithography techniques using colloidal chemistry. The size of the nanocrystals can be varied easily by varying the process parameters to study the quantum confinement effect. Here we present the simple synthesis method of Pb-CdSe and characterization of the same with XRD, UV-VIS spectroscopy and AFM. Also we present the I-V characteristics of Single Electron Transistor, by applying different values of Gate voltage. Decrease in the size of the nanoparticles will result in increase in charging energy and hence leads to more prominent Coulomb Blockade phenomena. Gate voltage controls the movement of electron from the blockade region and hence can be used in charge sensing application as they detect the motion of single electron.

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