Abstract
A single-chip UHF RFID reader transceiver IC has been implemented in 0.18 μm SiGe BiCMOS technology. The chip includes all transceiver blocks as RX/TX RF front-end, RX/TX analog baseband, frequency synthesizer and I2C with fully-compliant China 800/900 MHz RFID draft, ISO/IEC 18000-6C protocol and ETSI 302 208-1 local regulation. The normal mode receiver in the presence of -3 dBm self-jammer achieves -75 dBm 1% PER sensitivity. The linear class-A PA integrated in transmitter has 25 dBm OP1 dB output power for CW. The fully-integrated fractional-N fre-quency synthesizer is designed based on MASH 1-1-1 sigma-delta modulator and 1.8 GHz fundamental frequency LC-VCO for lower in-band and out-of-band phase noise. The measured phase noise is up to -106 dBc/Hz@200 kHz and -131 dBc/Hz@1 MHz offset from center frequency and the integrated RMS jitter from 10 kHz to 10 MHz is less than 1.6 pS. The chip dissipates 330 mA from 3.3 V power supply when transmitting 22.4 dBm CW signal and the PAE of linear PA is up to 26%. The chip die area is 16.8 mm2.
Highlights
UHF RFID reader constructed by discrete components has achieved major market in many applications such as logistic, traffic distribution, asset management and industrial flow line controlling using non-battery-powered system [1]
A single-chip UHF RFID reader transceiver IC has been implemented in 0.18 μm SiGe BiCMOS technology
The fully-integrated fractional-N frequency synthesizer is designed based on MASH 1-1-1 sigma-delta modulator and 1.8 GHz fundamental frequency LC-VCO for lower in-band and out-of-band phase noise
Summary
UHF RFID reader constructed by discrete components has achieved major market in many applications such as logistic, traffic distribution, asset management and industrial flow line controlling using non-battery-powered system [1]. The integration scheme of UHF RFID reader transceiver is becoming the critical problem and attracting lots of research attention from all over the world [3,4,5,6,12]. This paper describes a monolithic UHF RFID reader transceiver for mobile RFID application, which is fabricated in the mature and low-cost 0.18 μm SiGe BiCMOS process. In LBT mode, the RX sensitivity is −85 dBm; in normal mode, while the inband self-jammer of supplying energy to passive tag is −3 dBm, the 1% PER RX sensitivity is about −75 dBm. The reader transmitter sufficiently meets the transmission mask of China draft and ISO/IEC 18000-6C multipleinterrogator mode and the out-of-emission requirements from ETSI 302 208-1 regulation.
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