Abstract
The Curve-fitting equation A/(1 + BT) is used in this study of the temperature dependence of a MOSFET's drain current. This leads to a simplified delay-time model in predicting the temperature coefficient of delay-time for a CMOS circuit. Good agreement is obtained between the measured CMOS ring-oscillator delay time and the simplified model. Both the experimental and computer-simulated data suggest that the half-supply point can be used to estimate the temperature coefficient of CMOS delay time.
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