A simple theoretical analysis of the gate capacitance of metal-oxide-semiconductor field effect devices of non-parabolic materials in the presence of a parallel magnetic field

Abstract

An attempt is made to study the gate capacitance of metal-oxide-semiconductor field effect devices of non-parabolic materials in the presence of a parallel magnetic field for both the weak and the strong electric field-limits respectively. It is found, on the basis of newly derived generalized two-dimensional electron energy spectra by incorporating anisotropic crystal potential to the Hamiltonian together with the anisotropies in the effective electron masses and the spin-orbit splitting parameter of the valence band within the domain of k · p theory, for both the limits, that the gate capacitances for n-channel inversion layers on Cd 3As 2 increase with increasing surface electric fields in an oscillatory manner. Besides the gate capacitances increase with decreasing alloy composition for both n-channel inversion layers on Hg 1− x Cd x Te and In 1− x Ga x As y P 1− y lattice matched to InP respectively. In addition, the correspo well-known results for n-channel inversion layers of wide-gap materials in the absence of a parallel magnetic field have also been obtained as special cases of our generalized analysis under certain limiting conditions.