Abstract
In this brief, we present a quasi-static compact model for bipolar ReRAM memristive devices. This model is based on a piecewise model in flux-charge space for reset and set transitions that has been extended to build a compact model of reset/set transitions for different slopes. In order to show its functionality, we use it to reproduce the behavior of a device fabricated by the CNR-IMM, MDM Laboratory. We discuss the needed parameters extraction procedure for the device. As shown in the results, the implemented model is able to capture the effects of the slope change in the ramp input signal for reset and set by using a set of technological parameters related to the device and information related to the slope of the ramp input voltage signal.
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