Abstract
In this paper, we develop and test a piecewise model for the reset and set transitions of a bipolar ReRAM memristive device in the flux-charge space, instead of the usual voltage–current one. To do so, we consider the devices as memristors. The model used is very simple and provides accurate simulation results. It also allows the development of simple expressions for the conductance and power consumption, as well as the characterization of the ReRAM memristive device in voltage–current domain by using two points for any reset or set cycle. We consider the case of a ramp input signal with different slopes to obtain the model parameters, and we compare the predictions of our model with experimental results.
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