A simple method to fabricate high-performance carbon nanotube field emitters

Abstract

A simple new method to fabricate carbon nanotube field emitters was developed. Single wall carbon nanotubes with high graphitization were attached on Sn or Ni layered glass substrate in-situ in arc-discharge chamber. Post heat treatments below the deformation temperature of soda-lime glass guaranteed a good mechanical adhesion and electrical contact of the nanotubes. The morphology of the metal electrode layers was examined with the heat treatment temperatures to optimize the heat treatments. The emitters formed on Sn layers showed lower turn-on voltage and higher current density than those formed on Ni layers. A good field emission performance was realized in an emitter where nanotubes were deposited on Sn layer of the thickness 100 nm and annealed at 300∘C. The current density was 2.5 mA/cm2 at 3.5 V/μm. The emitter structure was maintained stable for 8 h.