Abstract
A simple method was used to fabricate a near-infrared (NIR) detector using PbTe nanostructures. Samples were synthesized by tellurization of lead sheets in a tube furnace. PbTe nanostructures with wires and flakes shapes were grown on the lead sheets that were placed at 300 and 330°C, respectively, while, PbTe nanoporous were grown at 360 and 390°C. X-ray diffraction patterns and X-ray photoelectron spectra results indicated that, the PbTe phase was formed in all samples. UV–vis diffuse reflectance spectra measurements showed a band gap for the PbTe nanostructures in the near-infrared region of the electromagnetic spectrum. Actually, the results indicated that, the band gap values of the PbTe nanowires and nanoporous were 1.54eV and 1.61eV, respectively. Finally, the PbTe nanostructures were used as a simple photoresponse device under a red light source. The photoresponse results revealed, PbTe nanowires are promising for photoelectrical applications in the NIR region.
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