Abstract
In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p‐type semiconductor are described. Applying the Shockley–Read–Hall model to a p‐type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.
Highlights
Carrier transition through the localized state of the indirect band semiconductor involves the capture of electrons from the conduction band by the localized state, followed by the recombination with holes in the valence band at the localized state or the reemission of electrons or holes back to their original band [1]
For the differentiation of the free-carrier trapping and recombination centers in the bandgap of p-type silicon, first, the expressions for the excess carrier accumulation rates at the localized sates in the valence and the conduction bands are formulated. is enables us to describe the expressions for USRH, UTδp, UEδp, UTδn, and UEδn and those of the corresponding excess carrier lifetimes
The expressions for cp and cn are determined for the first time in this work. e steady-state values of the excess carrier lifetimes are determined by dividing the steady-state values of the excess carrier densities in the bands and localized states by the corresponding transition rates
Summary
Carrier transition through the localized state of the indirect band semiconductor involves the capture of electrons from the conduction band by the localized state, followed by the recombination with holes in the valence band at the localized state or the reemission of electrons or holes back to their original band [1]. Is research starts its presentation with the description of the accumulation rates of the photogenerated carriers in the conduction band, the valence band, and the localized states in the bandgap of p-type silicon under the low injection level. E electron trapping and emission rates between the localized states and the conduction band dominate the localized states of energy between the recombination center and the donor level. It is confirmed in this work that only excess minority trapping has a major effect on the performance of the semiconductor material, and majority carrier trapping has a minor effect
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