A simple method to decompose the amplitudes of different random variation sources in FinFET technology

Abstract

A simple device-level characterization method to decompose the amplitudes of different random variation sources in FinFET technology is proposed for the first time. The impacts of the major two categories of random variation sources: metal gate granularity (MGG) and line-edge roughness (LER) on V th variation are decomposed based on the differences in the physical mechanisms. The proposed method is verified based on 14nm FinFET platform. This work can provide helpful guidelines for future variation-aware technology development.