Abstract
Abstract A novel technique for depositing oxygen-free low resistivity titanium silicide films with a controllable amount of excess silicon has been developed and is reported in this paper. This method employs electron beam evaporation of titanium and silicon in an ultrahigh vacuum environment to deposit alternate layers of metal and silicon in an appropriate ratio. The composite structure thus formed is finally covered with a relatively thick layer of evaporated silicon to eliminate the possibility of contamination of titanium during annealing. Heating in an inert ambient above 600°C results in a low resistivity titanium silicide layer. Auger analysis reveals the absence of oxygen contamination. Detailed analysis of the annealed layer from its reflection electron diffraction pattern indicates possible phase changes with varying annealing temperature.
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