Abstract
In this brief, an approximate solution of the breakdown voltage for a 6H-SiC parallel-plane junction is presented. Then a simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices is performed. It is shown that the reciprocal of the punch-through factor should be 16/21=0.76 for the optimum punch-through junctions used in 6H-SiC unipolar power devices and 5/21=0.24 for bipolar power devices. Analytical expressions for the optimal base doping concentration and base thickness are obtained as a function of the breakdown voltage subject to minimum constraints on the on-state resistance and base width for unipolar power and bipolar power devices, respectively.
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