Abstract
We developed a simple method for characterizing high-frequency properties of (Ba,Sr)TiO3 thin film capacitors. This method includes a new fabrication process, a simple circuit model of measurement pattern and an easy procedure to de-embed parasitic components. In this study, we successfully fabricated BST capacitors of Pt/Ba0.7Sr0.3TiO3/Pt/Ti structure on the SiO2 coated Si substrate using a combination of lift-off process, wet etching and Au plating process. Also, we de-embedded parasitic components in the coplanar-type probing pad using two de-embedding patterns. As a result, it was found that the BST film had high dielectric property up to 5 GHz. This microwave property of the BST film is considered to be suitable for DRAM applications.
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