Abstract
A novel and efficient fabrication process based on sidewall oxidation of patterned silicon substrate is proposed and experimentally demonstrated for SiN/SiO waveguides on silicon substrate. The fabrication time of a 5.5 m-thick lower SiO cladding formed by the proposed sidewall oxidation method is only 1/3 of that required by conventional flat surface oxidation process. Thermal annealing process is carried out to reduce the propagation loss of the waveguide due to material absorption in the SiN core and the SiO upper cladding formed by plasma enhanced chemical vapour deposition. Furthermore, it is confirmed that waveguides fabricated by sidewall oxidation exhibit similar propagation loss as those obtained with conventional surface oxidation process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
