Abstract
AbstractA new simple circuit model for the MOS (metal‐oxide‐semiconductor) structure is presented. the model consists of three elements, namely, a linear capacitor, a non‐linear capacitor and a C‐dynamic element. Each component bears a simple relationship to the physical operating mechanism inside the MOS structure. the model can be used for simulating arbitrary MOS structure circuits under all operating conditions. In particular, it is capable of reproducing the structure's frequency‐dependent small‐signal characteristics. the model is also shown to exhibit many important and interesting dynamic behaviours under forward, reverse and sinusoidal operating modes.The model is based mainly upon the device's physical operating principles. But perhaps the most significant implication of this model is that it is the first ever to use a dynamic element to model the MOS structure from a physical approach.
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