A simple drain current model for single-walled carbon nanotube network thin-film transistors

Abstract

Single-walled carbon nanotube (CNT) network thin-film transistors (TFTs) are attractive owing to their simple, low-cost fabrication methods. However, the detailed operation mechanism for TFTs is still unclear. In this paper, we present a simple model for the drain current of CNT network TFTs operated in the linear region. The model is based on the gate electrostatics and the continuity condition of the currents through CNT and CNT-CNT tunnel junction. The model is evaluated by comparing its calculations to experimentally measured drain current and low frequency (1/f) noise parameters. Even though the present model is based on simplified assumptions, it provides useful information to improve the TFT performance.