Low-frequency noise in carbon nanotube network thin-film transistors

Abstract

Bottom-gate single-walled carbon nanotube (SWCNT) network thin-film transistors (TFTs) are fabricated and their low-frequency noise characteristics evaluated. Clear 1/f (f: frequency) and (IDS: drain current) dependences are observed in the drain current noise power densities. The A/R (A: noise coefficient and R: resistance) was proportional to (LG: gate length). The experimental results for TFTs are discussed on the basis of Hooge’s empirical law. A simple model is proposed to explain why the A/R in our TFTs are smaller than those reported in individual CNT field-effect transistors (FETs). These results demonstrate that the 1/f noise in SWCNT TFTs originates not with the CNT–CNT junctions but rather with the CNTs themselves.