Abstract
Abstract Cu2SnS3 (CTS) thin films of different thicknesses were prepared onto the glass and the FTO substrate by chemical bath deposition method at the deposition temperature of 80°C. X-ray diffraction pattern emphasizes that all the thin films established are polycrystalline and crystallized in tetragonal structure with preferential orientation along (1 1 2) direction. The crystallite size rises from 34.12 nm to 53.30 nm with increase of film thickness. Morphology of the films as seen from the SEM depict the whole surface of the substrate is packed with sharp edge cubes. EDAX analysis explores that the films prepared are nearly stoichiometric without significant deviation. From the optical spectra there is allowed and direct manner transition is observed.It is examined that as film thickness increases transmission decreases. The band gap energy reduces from 2.7 to 1.8 eV as elevation in film thickness. Photoelectrochemical (PEC) performance becomes superior with increasing deposition time.
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