A simple C- V method to extract the correct equivalent box and the Gaussian representations of the channel-doping profile and the flat-band voltage of BC-MOSFETs

Abstract

In this paper, a new C- V analysis of the BC-MOSFET operating in the depletion region and at the onset of punch-through inversion is given. It is shown that, the parameters of the BC-MOSFET required for circuit simulation, namely, the flat-band voltage and the equivalent box representation for the channel-doping profile, as well as the straggle σ and the range R p of the channel-doping useful for process tailoring can be easily obtained from simple C- V measurements.