Year-end Sale % OFF 
Abstract
Most large-signal analyses of IMPATT diodes neglect the diffusion of charge carriers in the drift region. A correction can be introduced to include the effect of diffusion in the negative conductance or the efficiency of the IMPATT diode calculated from such analyses. An approximate method of estimating a simple correction factor is presented using the Read model of the diode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
