Abstract
We have developed a new bi-epitaxial structure, namely YBCO (780°C)/YBCO (600°C)/YSZ (in-plane rotation 45°) and YBCO (780°C)/YSZ (in-plane rotation 0°) boundary. In comparison to the YBCO/CeO 2/YSZ/MgO (in-plane rotation 45°) and YBCO/MgO (in-plane rotation 0°) boundary previously developed in our laboratory, the new preparation is much simpler and has many advantages. For one, this method avoids the difficulty of lattice mismatch between the pure YBCO film and the MgO substrate. A clean 45° rotation can be achieved without growing different kinds of buffer layers. Furthermore, the first YBCO layer can be used as an endpoint indication during dry etching for device fabrication. Most importantly, the I–V curves taken at low temperatures show the RSJ behavior, with a high J C value (∼10 5 A/cm 2) and I C R N product (∼1 mV) at 4.2 K.
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