Abstract
Electron holography is a powerful tool to investigate the properties of micro- and nanostructured electronic devices. A meaningful interpretation of the holographic data, however, requires an understanding of the 3D potential distribution inside and outside the sample. Standard approaches to resolve these potential distributions involve projective tilt series and their tomographic reconstruction, in addition to extensive simulations. Here, a simple and intuitive model for the approximation of such long-range potential distributions surrounding a nanostructured coplanar capacitor is presented. The model uses only independent convolutions of an initial potential distribution with a Gaussian kernel, allowing the reconstruction of the entire potential distribution from only one measured projection. By this, a significant reduction of the required computational power as well as a drastically simplified measurement process is achieved, paving the way towards quantitative electron holographic investigation of electrically biased nanostructures.
Published Version
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