Abstract
Transparent p-type potassium-doped ZnO (KZO) thin films are fabricated by a simple and effective approach of molten-salt treatment (MST) in KNO3 for ZnO thin films, to further fabricating p-n homojunction KZO/ZnO thin films with one-step method. XRD and PL results show the influence of MST on ZnO crystal, especially on the grain size. The transmittance of KZO/ZnO thin films has been slightly improved in visible-light region. Notably, after MST at 400 °C, hall-effect test reveals that the carrier type successfully transfers to p-type, and I-V curve hints that the p-n homojunction KZO/ZnO could be considered formed. Meanwhile, TEM, SIMS and XPS results reveal that K has doped into KZO thin films, resulting in the generated p-type carriers.
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