A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature

Abstract

We present a simple analytical model that accounts for the effects of temperature on the propagation delay of the CMOS inverter, implemented with polycrystalline silicon (polysilicon) thin film transistors. We have also fabricated polysilicon CMOS inverters with a variety of crystallization methods. We measure their switching speed as a function of temperature, and compare the results with the analytical model’s predictions. The experimental data are shown to be in excellent agreement with the developed model, which constitutes an effective tool for modeling the impact of temperature on polysilicon digital circuits.