Abstract
In the past years, nano-sized Nb2O5 has been widely as a potential photocatalyst due to its good chemical stability and higher conduction band edge than TiO2. However, the photocatalytic application of Nb2O5 is limited by vide band gap (3.4–4 eV) because only UV light could be harvested. In this work, Nb2O5-based photocatalyst, AgNb2O5F, was developed by solid-state reaction. The phase formation and surface characteristics were investigated. AgNb2O5F has a direct allowed transition with band energy of 2.68 eV. It has a highly positive valence band. The photocatalysis degradation of MB solutions by Nb2O5 is less than 10% after the light irradiation (λ > 420 nm) in 120 min. AgNb2O5F shows a rapid degradation, which is 83% under the same conditions. AgNb2O5F presents more efficient degradation of organic dyes than Nb2O5. This semiconductor also keeps stabilities for photo-corrosions and photo-degradation reactions. The photocatalytic activities were discussed on the luminescence and decay lifetimes.
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