Abstract

We are manufacturing microstrip gas chambers (MSGC) on silicon with an insulating SiO 2 layer. To study the effect of the sheet resistance of the SiO 2 on the operation of the detector several processes to modify the SiO 2 layer have been investigated: ion implantation, boron and phosphorus diffusion, phosphosilicate glass evaporation and polycrystalline silicon deposition. The dependence of the gas gain on the potentials of the different electrodes and the long term stability have been studied.

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