Abstract
A submicron n-well SWAMI-LOCOS CMOS process on silicon substrate has been used for monolithic integration of an electrooptical systemn consisting of waveguides, photodetectors and VLSI CMOS circuits. The optical films have been deposited as SiON films on SiO 2 buffer layers by LPCVD or PECVD technique, waveguides were delineated by plasma etching of the SiON film.
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